Tuesday, November 20 2018

All day
All times

New materials and physics mechanisms are required to further lower down the power consumption and increase the switching speed of magnetic memory devices. In this talk, I will focus on two novel material systems which can provide new opportunities for magnetic switching. First of all, I will discuss our recent study on compensated ferrimagnetic alloys which have antiferromagnetically coupled sublattices, low magnetic moment and fast switching dynamics. Particularly, I will show that efficient electrical reading and writing can be realized in those thin films with zero magnetic moment[1, 2].