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Tuesday, November 20 2018

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New materials and physics mechanisms are required to further lower down the power consumption and increase the switching speed of magnetic memory devices. In this talk, I will focus on two novel material systems which can provide new opportunities for magnetic switching. First of all, I will discuss our recent study on compensated ferrimagnetic alloys which have antiferromagnetically coupled sublattices, low magnetic moment and fast switching dynamics. Particularly, I will show that efficient electrical reading and writing can be realized in those thin films with zero magnetic moment[1, 2].