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Event Date and Time
215 Sharp Lab
Tingyi Gu, University of Delaware

Electrons in single atomic layer of crystals of graphene possess a new degree of freedom for designing nonlinear and optoelectronic devices. Zero bandgap of graphene leads to dominating metallic behavior for carrier conduction and broadband light absorption. The limited density of states in graphene also leads to semiconductor-like behavior, such as Pauli blocking and absorption saturation. In this talk, we will be focusing on using integrated nanophotonic devices to confine and localize photon for enhanced light-matter interaction in subwavelength scale. The strong nonlinear response of graphene, including ultrafast Kerr response and two photon absorption, lead to efficient wavelength conversion and ultra-low power optical bistable switching on silicon nanophotonic platform. Also, I will introduce our recent work on new device architectures for ambipolar transport based graphene photodetectors. The microscopic Raman and photocurrent spectroscopy are utilized for studying the optical absorption and carrier transport behavior across the graphene-silicon heterojunction interface.